Film coating wafers
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E-mail waferhome@hotmail.comSpecification for Film Coating Wafer
| Substruct | Dimeter | Type/dopant |
Orientaion |
thickness | Resistivity | Film material | thickness | other parameter |
|---|---|---|---|---|---|---|---|---|
| monocrystal silicon polished wafer | 25.4mm 50.8mm 76.5mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation |
400um+/-20 400um+/- 20 400um+/-20 | 0.0001 - 200 Ohm-cm /Customization |
oxided layer | <100nm 100nm - 300nm >1000nm | density(g/cm3) 2.3(dry oxided) 2.2(wet oxided) stream oxided (2.15) |
| 100mm 125mm 150mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 525um+/-20 625um+/-20 625um+/-20 | 0.0001 - 200 Ohm-cm /Customization | oxided layer | <100nm 100nm - 300nm >1000nm | density(g/cm3) 2.3(dry oxided) 2.2(wet oxided) stream oxided (2.15) | |
| 200mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 725um+/-20 | 0.0001 - 200 Ohm-cm /Customization | oxided layer | <100nm 100nm - 300nm >1000nm | density(g/cm3) 2.3(dry oxided) 2.2(wet oxided) stream oxided (2.15) | |
| 300mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 775um+/-20 | 0.0001 - 200 Ohm-cm /Customization | oxided layer | <100nm 100nm - 300nm >1000nm | density(g/cm3) 2.3(dry oxided) 2.2(wet oxided) stream oxided (2.15) | |
| monocrystal silicon polished wafer | 25.4mm 50.8mm 76.5mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation |
200um+/- 20 100um+/-20 customization | 0.0001 - 200 Ohm-cm /Customization |
Aluminum | <100nm 100nm - 300nm >1000nm | density(g/cm3) 2.3(dry oxided) 2.2(wet oxided) stream oxided (2.15) |
| 100mm 125mm 150mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 100um+/-20 200um+/- 20 customization | 0.0001 - 200 Ohm-cm /Customization | Aluminum | <100nm 100nm - 300nm >1000nm | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
| 200mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 100um+/-20 200um+/- 20 customization | 0.0001 - 200 Ohm-cm /Customization | Aluminum | <100nm 100nm - 300nm >1000nm | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
| 300mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 100um+/-20 200um+/- 20 customization | 0.0001 - 200 Ohm-cm /Customization | Aluminum | <100nm 100nm - 300nm >1000nm | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
| monocrystal silicon polished wafer | 25.4mm 50.8mm 76.5mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation |
1000um 2000um customization | 0.0001 - 200 Ohm-cm /Customization |
Au | <100nm 300nm >1000nm | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um |
| 100mm 125mm 150mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 1000um 2000um customization | 0.0001 - 200 Ohm-cm /Customization | Au | <100nm 300nm >1000nm | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
| 25.4mm 50.8mm 76.5mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation |
1000um 2000um customization | 0.0001 - 200 Ohm-cm /Customization |
Ti | <100nm 300nm >1000nm | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
| 100mm 125mm 150mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 1000um 2000um customization | 0.0001 - 200 Ohm-cm /Customization | Ti | <100nm 300nm >1000nm | TTV < 5um TIR <3um STIR < 2um BOW < 20um Warp < 30um | |
| monocrystal silicon polished wafer | 25.4mm 50.8mm 76.5mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation |
400um+/-20 400um+/- 20 400um+/-20 | 0.0001 - 200 Ohm-cm /Customization |
GaN | <100nm 300nm >1000nm | TTV < 2um TIR <1um STIR < 1um BOW < 10um Warp < 10um |
| 100mm 125mm 150mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 525um+/-20 625um+/-20 625um+/-20 | 0.0001 - 200 Ohm-cm /Customization | GaN | <100nm 300nm >1000nm | TTV < 2um TIR <1um STIR < 1um BOW < 10um Warp < 10um | |
| 200mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 725um+/-20 | 0.0001 - 200 Ohm-cm /Customization | GaN | <100nm 300nm >1000nm | TTV < 2um TIR <1um STIR < 1um BOW < 10um Warp < 10um | |
| 300mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 775um+/-20 | 0.0001 - 200 Ohm-cm /Customization | GaN | <100nm 300nm >1000nm | TTV < 2um TIR <1um STIR < 1um BOW < 10um Warp < 10um | |
| monocrystalsappair polished wafer | 25.4mm 50.8mm 76.5mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation |
400um+/-20 400um+/- 20 400um+/-20 | 0.0001 - 200 Ohm-cm /Customization |
GaN | <100nm 300nm >1000nm | TTV < 2um TIR <1um STIR < 1um BOW < 10um Warp < 10um |
| 100mm 125mm 150mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 525um+/-20 625um+/-20 625um+/-20 | 0.0001 - 200 Ohm-cm /Customization | GaN | <100nm 300nm >1000nm | TTV < 2um TIR <1um STIR < 1um BOW < 10um Warp < 10um | |
| 200mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 725um+/-20 | 0.0001 - 200 Ohm-cm /Customization | GaN | <100nm 300nm >1000nm | TTV < 2um TIR <1um STIR < 1um BOW < 10um Warp < 10um | |
| 300mm | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 775um+/-20 | 0.0001 - 200 Ohm-cm /Customization | GaN | <100nm 300nm >1000nm | TTV < 2um TIR <1um STIR < 1um BOW < 10um Warp < 10um | |
| monocrystal GaAs polished wafer | 50.8mm 76.5mm | |||||||
| 100mm 125mm | ||||||||
| 150mm | ||||||||